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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole - Brand new item, still in OEM packaging - Check out the images for more product details Product details IGBT Discretes & Modules, STMicroelectronics The Insulated...View more

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Sku: 1688882

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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

- Brand new item, still in OEM packaging

- Check out the images for more product details

Product details

IGBT Discretes & Modules, STMicroelectronics

The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Maximum Continuous Collector Current   60 A
Maximum Collector Emitter Voltage   600 V
Maximum Gate Emitter Voltage   ±20V
Maximum Power Dissipation   200 W
Package Type   TO-247
Mounting Type   Through Hole
Channel Type   N
Pin Count   3
Transistor Configuration   Single
Dimensions   15.75 x 5.15 x 24.45mm
Minimum Operating Temperature   -55 °C
Gate Capacitance   2400pF
Maximum Operating Temperature   +150 °C
Energy Rating   770mJ

Manufacturer: STM

Manufacturer Part Number: STGW35HF60WD

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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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