STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole - Brand new item, still in OEM packaging Check out the images for more product details Product details IGBT Discretes & Modules, STMicroelectronics The Insulated Gate Bipolar...View more

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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

- Brand new item, still in OEM packaging

Check out the images for more product details
Product details
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Maximum Continuous Collector Current 60 A
Maximum Collector Emitter Voltage 600 V
Maximum Gate Emitter Voltage ±20V
Maximum Power Dissipation 200 W
Package Type TO-247
Mounting Type Through Hole
Channel Type N
Pin Count 3
Transistor Configuration Single
Dimensions 15.75 x 5.15 x 24.45mm
Minimum Operating Temperature -55 °C
Gate Capacitance 2400pF
Maximum Operating Temperature +150 °C
Energy Rating 770mJ
Manufacturer: STM
Manufacturer Part Number: STGW35HF60WD
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STMicroelectronics STGW35HF60WD IGBT, 60 A 600 V, 3-Pin TO-247, Through Hole

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